Infineon, a leading player in the global semiconductor industry, is hosting a virtual conference to bring together power electronics engineers and designers to discuss the benefits and use cases of Silicon (Si), Silicon-Carbide (SiC) and Gallium-Nitride (GaN) semiconductors for system engineers and designers. 

 

Modified image courtesy of Infineon. 
Modified image courtesy of Infineon. 
 

The free, one-day program consists of keynotes and presentations from Infineon’s engineering and design leaders. Sessions will be live-streamed from Infineon’s office in Munich, Germany, with recordings available on-demand after the program. The event begins on March 11 at 10 a.m. Central European Time (or 4 a.m. Eastern Standard Time) and closes at 3:30 p.m. CET. 

Infineon says the forum is ideal for engineers focused on R&D, design, pre-development and application fields, as well as product designers, technical researchers and design houses. 

Attendees can expect expert-led sessions focusing on the characteristics and advantages of high-efficiency, power-dense CoolSiC MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) compared to Silicon-based IGBTs (Insulated Gate Bipolar Transistors). 

The program will focus on Infineon’s wide bandgap semiconductor solutions. An “application insights” portion of the program will offer use cases and demos showing the benefits of CoolSiC and CoolGaN solutions for servo drives, integrated power stages, power supplies and other applications. 

Infineon’s CoolSiC product portfolio offers diodes, hybrid devices and MOSFET devices, ranging from ultra-low to high-voltage power devices for electric vehicle charging, industrial drives, uninterruptible power supply systems, e-Mobility and solar energy applications.

The company’s CoolGaN power transistors offer a highly efficient power conversion solution for voltages of up to 600V, well-suited for servers, telecom systems, adapters and chargers, wireless charging products and Class D audio applications. 

Speakers include engineering and design executives from Infineon’s industrial power control divisions, strategic system engineering, technical marketing, and other areas within the company. Presentations will cover adjusted reliability approaches for SiC and GaN power devices, comparing SiC and GaN to their silicon counterparts, the differences of Si and WBG technologies for switch mode power supplies, and other topics.

Tickets are free, but attendees must register by March 10.


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